3d-electron induced magnetic phase transition in half-metallic semi-Heusler alloys

We study the effect of the non-magnetic 3\textit{d} atoms on the magnetic properties of the half-metallic (HM) semi-Heusler alloys Co$_{1-x}$Cu$_{x}$MnSb and Ni$_{1-x}$Cu$_{x}$MnSb ($0 \leq x \leq 1$) using first-principles calculations. We determine the magnetic phase diagram of both systems at zero temperature and obtain a phase transition from a ferromagnetic to an antiferromagnetic state. For low Cu concentrations the ferromagnetic RKKY-like exchange mechanism is dominating, while the antiferromagnetic superexchange coupling becomes important for larger Cu content leading to the observed magnetic phase transition. A strong dependence of the magnetism in both systems on the position of the Fermi level within the HM gap is obtained. Obtained results are in good agreement with the available experimental data

Effect of Local Electron-Electron Correlation in Hydrogen-like Impurities in Ge

We have studied the electronic and local magnetic structure of the hydrogen interstitial impurity at the tetrahedral site in diamond-structure Ge, using an empirical tight binding + dynamical mean field theory approach because within the local density approximation (LDA) Ge has no gap. We first establish that within LDA the 1s spectral density bifurcates due to entanglement with the four neighboring sp3 antibonding orbitals, providing an unanticipated richness of behavior in determining under what conditions a local moment hyperdeep donor or Anderson impurity will result, or on the other hand a gap state might appear. Using a supercell approach, we show that the spectrum, the occupation, and the local moment of the impurity state displays a strong dependence on the strength of the local on-site Coulomb interaction U, the H-Ge hopping amplitude, the depth of the bare 1s energy level epsilon_H, and we address to some extent the impurity concentration dependence. In the isolated impurity, strong interaction regime a local moment emerges over most of the parameter ranges indicating magnetic activity, and spectral density structure very near (or in) the gap suggests possible electrical activity in this regime.Comment: 9 pages, 5 figure

Ab-initio determined electronic and magnetic properties of half-metallic NiCrSi and NiMnSi Heusler alloys; the role of interfaces and defects

Using state-of-the-art first-principles calculations we study the properties of the ferromagnetic Heusler compounds NiYSi where Y stands for V, Cr or Mn. NiCrSi and NiMnSi contrary to NiVSi are half-metallic at their equilibrium lattice constant exhibiting integer values of the total spin magnetic moment and thus we concentrate on these two alloys. The minority-spin gap has the same characteristics as for the well-known NiMnSb alloy being around $\sim$1 eV. Upon tetragonalization the gap is present in the density of states even for expansion or contraction of the out-of-plane lattice parameter by 5%. The Cr-Cr and Mn-Mn interactions make ferromagnetism extremely stable and the Curie temperature exceeds 1000 K for NiMnSi. Surface and interfaces with GaP, ZnS and Si semiconductors are not half-metallic but in the case of NiCrSi the Ni-based contacts present spin-polarization at the Fermi level over 90%. Finally, we show that there are two cases of defects and atomic-swaps. The first-ones which involve the Cr(Mn) and Si atoms induce states at the edges of the gap which persists for a moderate-concentration of defects. Defects involving Ni atoms induce states localized within the gap completely destroying the half-metallicity. Based on single-impurity calculations we associate these states to the symmetry of the crystal

Exchange interactions and temperature dependence of the magnetization in half--metallic Heusler alloys

We study the exchange interactions in half-metallic Heusler alloys using first-principles calculations in conjunction with the frozen-magnon approximation. The Curie temperature is estimated within both mean-field (MF) and random-phase-approximation (RPA) approaches. For the half-Heusler alloys NiMnSb and CoMnSb the dominant interaction is between the nearest Mn atoms. In this case the MF and RPA estimations differ strongly. The RPA approach provides better agreement with experiment. The exchange interactions are more complex in the case of full-Heusler alloys Co$_2$MnSi and Co$_2$CrAl where the dominant effects are the inter-sublattice interactions between the Mn(Cr) and Co atoms and between Co atoms at different sublattices. For these compounds we find that both MF and RPA give very close values of the Curie temperature slightly underestimating experimental quantities. We study the influence of the lattice compression on the magnetic properties. The temperature dependence of the magnetization is calculated using the RPA method within both quantum mechanical and classical approaches.Comment: New figures and discussio

Wannier Function Approach to Realistic Coulomb Interactions in Layered Materials and Heterostructures

We introduce an approach to derive realistic Coulomb interaction terms in free standing layered materials and vertical heterostructures from ab-initio modelling of the corresponding bulk materials. To this end, we establish a combination of calculations within the framework of the constrained random phase approximation, Wannier function representation of Coulomb matrix elements within some low energy Hilbert space and continuum medium electrostatics, which we call Wannier function continuum electrostatics (WFCE). For monolayer and bilayer graphene we reproduce full ab-initio calculations of the Coulomb matrix elements within an accuracy of $0.2$eV or better. We show that realistic Coulomb interactions in bilayer graphene can be manipulated on the eV scale by different dielectric and metallic environments. A comparison to electronic phase diagrams derived in [M. M. Scherer et al., Phys. Rev. B 85, 235408 (2012)] suggests that the electronic ground state of bilayer graphene is a layered antiferromagnet and remains surprisingly unaffected by these strong changes in the Coulomb interaction.Comment: 12 pages, 8 figure

Search for spin gapless semiconductors: The case of inverse Heusler compounds

We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications.Comment: Submitted to Applied Physics Letter

First principles design of Ohmic spin diodes based on quaternary Heusler compounds

The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to realize the OSD for room temperature applications as these materials possess very high Curie temperatures as well as half-metallic and spin-gapless semiconducting behavior within the same family. Using state-of-the-art first-principles calculations combined with the non-equilibrium Green's function method we design four different OSDs based on half-metallic and spin-gapless semiconducting quaternary Heusler compounds. All four OSDs exhibit linear current-voltage ($I-V$) characteristics with zero threshold voltage $V_T$. We show that these OSDs possess a small leakage current, which stems from the overlap of the conduction and valence band edges of opposite spin channels around the Fermi level in the SGS electrodes. The obtained on/off current ratios vary between $30$ and $10^5$. Our results can pave the way for the experimental fabrication of the OSDs within the family of ordered quaternary Heusler compounds.Comment: 7 pages, 5 figure

Voids-driven breakdown of the local-symmetry and Slater-Pauling rule in half-metallic Heusler compounds

Slater-Pauling (SP) rules connect the magnetic and electronic properties of the half-metallic (HM) Heuslercompounds. Employing first-principles electronic structure calculations we explore the validity of the SP rulesin the case of transition from HM semi-Heusler compounds to various cases of HM full-Heusler compounds.We show that the coherent-potential approximation yields half-metallicity and thus a generalized version of theSP rules can be derived. On the contrary, supercell calculations, which are expected to describe the experimentalsituation more accurately, show that the energy gap considerably shrinks for the intermediate compounds and inseveral cases the half-metallicity is completely destroyed. The origin of this behavior is attributed to the voids,which influence the symmetry of the lattice

AbAb InitioInitio Study of Magnetic Tunnel Junctions Based on Half-Metallic and Spin-Gapless Semiconducting Heusler Compounds: Reconfigurable Diode and Inverse Tunnel-Magnetoresistance Effect

Magnetic tunnel junctions (MTJs) have attracted strong research interest within the last decades due to their potential use as nonvolatile memory such as MRAM as well as for magnetic logic applications. Half-metallic magnets (HMMs) have been suggested as ideal electrode materials for MTJs to achieve an extremely large tunnel-magnetoresistance (TMR) effect. Despite their high TMR ratios, MTJs based on HMMs do not exhibit current rectification, i.e., a diode effect, which was achieved in a magnetic tunnel junction concept based on HMMs and type-II spin-gapless semiconductors (SGSs). The proposed concept has recently been experimentally demonstrated using Heusler compounds. In the present work, we investigate from first-principles MTJs based on type-II SGS and HMM quaternary Heusler compounds FeVTaAl, FeVTiSi, MnVTiAl, and CoVTiSb. Our $ab$ $initio$ quantum transport calculations based on a nonequilibrium Green's function method have demonstrated that the MTJs under consideration exhibit current rectification with relatively high on:off ratios. We show that, in contrast to conventional semiconductor diodes, the rectification bias voltage window (or breakdown voltage) of the MTJs is limited by the spin gap of the HMM and SGS Heusler compounds. A unique feature of the present MTJs is that the diode effect can be configured dynamically, i.e., depending on the relative orientation of the magnetization of the electrodes, the MTJ allows the electrical current to pass either in one or the other direction, which leads to an inverse TMR effect. The combination of nonvolatility, reconfigurable diode functionality, tunable rectification voltage window, and high Curie temperature of the electrode materials makes the proposed MTJs very promising for room-temperature spintronic applications and opens ways to magnetic memory and logic concepts as well as logic-in-memory computing.Comment: 14+7 pages, 7+10 figure

Role of the conduction electrons in mediating exchange interactions in Heusler alloys

Because of large spatial separation of the Mn atoms in Heusler alloys the Mn 3d states belonging to different atoms do not overlap considerably. Therefore an indirect exchange interaction between Mn atoms should play a crucial role in the ferromagnetism of the systems. To study the nature of the ferromagnetism of various Mn-based semi- and full-Heusler alloys we perform a systematic first-principles calculation of the exchange interactions in these materials. The calculation of the exchange parameters is based on the frozen-magnon approach. The calculations show that the magnetism of the Mn-based Heusler alloys depends strongly on the number of conduction electrons, their spin polarization and the position of the unoccupied Mn 3d states with respect to the Fermi level. Various magnetic phases are obtained depending on the combination of these characteristics. The Anderson's s-d model is used to perform a qualitative analysis of the obtained results. The conditions leading to diverse magnetic behavior are identified. If the spin polarization of the conduction electrons at the Fermi energy is large and the unoccupied Mn 3d states lie well above the Fermi level, an RKKY-type ferromagnetic interaction is dominating. On the other hand, the contribution of the antiferromagnetic superexchange becomes important if unoccupied Mn 3d states lie close to the Fermi energy. The resulting magnetic behavior depends on the competition of these two exchange mechanisms. The calculational results are in good correlation with the conclusions made on the basis of the Anderson s-d model which provides useful framework for the analysis of the results of first-principles calculations and helps to formulate the conditions for high Curie temperature.Comment: 16 pages, 9 figures, 2 table